Product Description

 DESCRIPTION
The MB*5RC**6V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of *2,**8
words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the
nonvolatile memory cells.
Unlike SRAM, the MB*5RC**6V is able to retain data without using a data backup battery.
The read/write endurance of the nonvolatile memory cells used for the MB*5RC**6V has improved to be
at least ***2 cycles, significantly outperforming other nonvolatile memory products in the number.
The MB*5RC**6V does not need a polling sequence after writing to the memory such as the case of Flash
memory or E2PROM.
 FEATURES
• Bit configuration : *2,**8 words x 8 bits
• Two-wire serial interface : Fully controllable by two ports: serial clock (SCL) and serial data (SDA).
• Operating frequency : 1 MHz (Max)
• Read/write endurance : ***2 times / byte
• Data retention : *0 years ( + *5 C), *5 years ( + *5 C), over **0 years ( + *5 C)
• Operating power supply voltage: 2.7 V to 5.5 V
• Low-power consumption : Operating power supply current **0 μ* (*@********************urrent *7 μA (Typ)
• Operation ambient temperature range
: **0 C to + *5 C
• Package : *-pin plastic SOP (**0mil)
*-pin plastic SOP (**8mil)
Both are RoHS compliant